FDC6333C Generic image

FDC6333C

Part No
FDC6333C
Manufacturer
onsemi
Description
ON SEMICONDUCTOR - FDC6333C - Dual MOSFET, N and P Channel, 2.5 A, 30 V, 0.095 ohm, 10 V, 1.8 V
Datasheet
FDC6333C
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 2.5 A
    Current Rating 2.5 A
    Drain to Source Resistance 95 mΩ
    Drain to Source Voltage (Vdss) 30 V
    Element Configuration Dual
    Fall Time 13 ns
    Gate to Source Voltage (Vgs) 25 V
    Input Capacitance 282 pF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 960 mW
    Min Breakdown Voltage 30 V
    Min Operating Temperature -55 °C
    Nominal Vgs 1.8 V
    Number of Channels 2
    Number of Elements 2
    Packaging Tape and Reel
    Power Dissipation 960 mW
    Rds On Max 95 mΩ
    Resistance 95 MΩ
    Rise Time 13 ns
    Schedule B 8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080
    Threshold Voltage 1.8 V
    Turn-Off Delay Time 11 ns
    Turn-On Delay Time 4.5 ns
    Case/Package SOT-23-6
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 6
    Number of Terminals 6
    Weight 36 mg
    Height 1 mm
    Length 3 mm
    Width 1.7 mm
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