FDD6N25TM Generic image

FDD6N25TM

Part No
FDD6N25TM
Manufacturer
onsemi
Description
N-Channel Power MOSFET, UniFETTM, 250 V, 4.4 A, 1.1 Ω, DPAK
Datasheet
FDD6N25TM
Test Report
Available
Samples
Available

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    Availability:
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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 4.4 A
    Drain to Source Breakdown Voltage 250 V
    Drain to Source Resistance 1.1 Ω
    Drain to Source Voltage (Vdss) 250 V
    Element Configuration Single
    Fall Time 12 ns
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 250 pF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 50 W
    Min Breakdown Voltage 250 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Packaging Cut Tape
    Power Dissipation 50 W
    Rds On Max 1.1 Ω
    Rise Time 25 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Threshold Voltage 5 V
    Turn-Off Delay Time 7 ns
    Turn-On Delay Time 10 ns
    Case/Package DPAK
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 2
    Weight 260.37 mg
    Height 2.517 mm
    Length 6.73 mm
    Width 6.22 mm
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