FDD6685 Generic image

FDD6685

Part No
FDD6685
Manufacturer
onsemi
Description
P-Channel PowerTrench® MOSFET, 30V, -40A, 20mΩ
Datasheet
FDD6685
Test Report
Available
Samples
Available

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    Availability:
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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 11 A
    Current Rating -40 A
    Drain to Source Breakdown Voltage -30 V
    Drain to Source Resistance 20 mΩ
    Drain to Source Voltage (Vdss) -30 V
    Dual Supply Voltage 30 V
    Element Configuration Single
    Fall Time 21 ns
    Gate to Source Voltage (Vgs) 25 V
    Input Capacitance 1.715 nF
    Max Junction Temperature (Tj) 175 °C
    Max Operating Temperature 175 °C
    Max Power Dissipation 52 W
    Min Breakdown Voltage 30 V
    Min Operating Temperature -55 °C
    Nominal Vgs 1.8 V
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 52 W
    Rds On Max 20 mΩ
    Resistance 20 MΩ
    Rise Time 11 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|85
    Termination SMD/SMT
    Threshold Voltage -1.8 V
    Turn-Off Delay Time 43 ns
    Turn-On Delay Time 17 ns
    Voltage Rating (DC) -30 V
    Case/Package TO-252
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 2
    Weight 260.37 mg
    Height 2.517 mm
    Length 6.73 mm
    Width 6.22 mm
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