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SI8402DB-T1-E1
- Part No
- SI8402DB-T1-E1
- Manufacturer
- Vishay
- Description
- 20-V N-CHANNEL 1.8-V (G-S) MOSFET | Siliconix / Vishay SI8402DB-T1-E1
- Datasheet
- SI8402DB-T1-E1
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 5.3 A |
| Drain to Source Breakdown Voltage | 20 V |
| Drain to Source Resistance | 43 mΩ |
| Drain to Source Voltage (Vdss) | 20 V |
| Element Configuration | Single |
| Fall Time | 145 ns |
| Gate to Source Voltage (Vgs) | 8 V |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 2.77 W |
| Min Breakdown Voltage | 20 V |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Power Dissipation | 1.47 W |
| Rds On Max | 37 mΩ |
| Resistance | 37 MΩ |
| Rise Time | 145 ns |
| Turn-Off Delay Time | 45 ns |
| Turn-On Delay Time | 30 ns |
| Mount | Surface Mount |
| Number of Pins | 4 |
| Number of Terminals | 4 |
| Height | 355.6 µm |
| Length | 1.5748 mm |
| Width | 1.6002 mm |
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