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SI4923DY-T1-E3
- Part No
- SI4923DY-T1-E3
- Manufacturer
- Vishay
- Description
- MOSFET 2P-CH 30V 6.2A 8-SOIC
- Datasheet
- SI4923DY-T1-E3
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 6.2 A |
| Drain to Source Breakdown Voltage | -30 V |
| Drain to Source Resistance | 21 mΩ |
| Drain to Source Voltage (Vdss) | 30 V |
| Element Configuration | Dual |
| Fall Time | 10 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 2 W |
| Min Breakdown Voltage | 30 V |
| Min Operating Temperature | -55 °C |
| Number of Elements | 2 |
| Power Dissipation | 1.1 W |
| Rds On Max | 21 mΩ |
| Rise Time | 10 ns |
| Turn-Off Delay Time | 135 ns |
| Turn-On Delay Time | 15 ns |
| Case/Package | SOIC |
| Mount | Surface Mount |
| Number of Pins | 8 |
| Number of Terminals | 8 |
| Height | 1.5494 mm |
| Length | 4.9784 mm |
| Width | 3.9878 mm |
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