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SQ4920EY-T1_GE3
- Part No
- SQ4920EY-T1_GE3
- Manufacturer
- Vishay
- Description
- MOSFET 2N-CH 30V 8A 8SO
- Datasheet
- SQ4920EY-T1_GE3
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 8 A |
| Drain to Source Resistance | 16 mΩ |
| Drain to Source Voltage (Vdss) | 30 V |
| Element Configuration | Dual |
| Fall Time | 8 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 1.465 nF |
| Max Operating Temperature | 175 °C |
| Max Power Dissipation | 4.4 W |
| Min Breakdown Voltage | 30 V |
| Min Operating Temperature | -55 °C |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Power Dissipation | 4.4 W |
| Rds On Max | 14.5 mΩ |
| Resistance | 17.5 mΩ |
| Rise Time | 10 ns |
| Threshold Voltage | 2 V |
| Turn-Off Delay Time | 25 ns |
| Turn-On Delay Time | 7 ns |
| Case/Package | SO |
| Mount | Surface Mount |
| Number of Pins | 8 |
| Number of Terminals | 8 |
| Weight | 506.605978 mg |
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