SUP50N03-5M1P-GE3 Generic image

SUP50N03-5M1P-GE3

Part No
SUP50N03-5M1P-GE3
Manufacturer
Vishay
Description
MOSFET N-CH 30V 50A TO-220AB
Test Report
Available
Samples
Available

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    Availability:
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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 50 A
    Drain to Source Resistance 5.1 mΩ
    Drain to Source Voltage (Vdss) 30 V
    Element Configuration Single
    Fall Time 9 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 2.78 nF
    Max Operating Temperature 150 °C
    Max Power Dissipation 59.5 W
    Min Breakdown Voltage 30 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Packaging Bulk
    Power Dissipation 2.7 W
    Rds On Max 5.1 mΩ
    Rise Time 9 ns
    Threshold Voltage 1 V
    Turn-Off Delay Time 35 ns
    Turn-On Delay Time 8 ns
    Case/Package TO-220AB
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Weight 6.000006 g
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