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SQ4840EY-T1_GE3
- Part No
- SQ4840EY-T1_GE3
- Manufacturer
- Vishay
- Description
- MOSFET N-CH 40V 20.7A
- Datasheet
- SQ4840EY-T1_GE3
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 20.7 A |
| Drain to Source Breakdown Voltage | 40 V |
| Drain to Source Resistance | 9 mΩ |
| Drain to Source Voltage (Vdss) | 40 V |
| Fall Time | 9.5 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 2.44 nF |
| Max Operating Temperature | 175 °C |
| Max Power Dissipation | 7.1 W |
| Min Breakdown Voltage | 40 V |
| Min Operating Temperature | -55 °C |
| Nominal Vgs | 2 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Power Dissipation | 1.56 W |
| Rds On Max | 9 mΩ |
| Rise Time | 9.5 ns |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Threshold Voltage | 2 V |
| Turn-Off Delay Time | 38 ns |
| Turn-On Delay Time | 17.5 ns |
| Case/Package | SOIC |
| Mount | Surface Mount |
| Number of Pins | 8 |
| Number of Terminals | 8 |
| Weight | 186.993455 mg |
| Height | 1.55 mm |
| Length | 5 mm |
| Width | 4 mm |
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