SIR412DP-T1-GE3 Generic image

SIR412DP-T1-GE3

Part No
SIR412DP-T1-GE3
Manufacturer
Vishay
Description
MOSFET N-CH 25V 20A PPAK SO-8
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 20 A
    Drain to Source Breakdown Voltage 25 V
    Drain to Source Resistance 12 mΩ
    Drain to Source Voltage (Vdss) 25 V
    Element Configuration Single
    Fall Time 10 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 600 pF
    Max Operating Temperature 150 °C
    Max Power Dissipation 15.6 W
    Min Breakdown Voltage 25 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Packaging Digi-Reel®
    Power Dissipation 3.9 W
    Rds On Max 12 mΩ
    Rise Time 13 ns
    Schedule B 8541290080
    Turn-Off Delay Time 13 ns
    Turn-On Delay Time 13 ns
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 5
    Weight 506.605978 mg
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