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SI1022R-T1-E3
- Part No
- SI1022R-T1-E3
- Manufacturer
- Vishay
- Description
- 60V (D-S) N-CH MOSFET W/ESD PROTECT | Siliconix / Vishay SI1022R-T1-E3
- Datasheet
- SI1022R-T1-E3
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Upon a request
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 330 mA |
| Drain to Source Breakdown Voltage | 60 V |
| Drain to Source Resistance | 1.25 Ω |
| Drain to Source Voltage (Vdss) | 60 V |
| Element Configuration | Single |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 30 pF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 250 mW |
| Min Breakdown Voltage | 60 V |
| Min Operating Temperature | -55 °C |
| Nominal Vgs | 2.5 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Power Dissipation | 250 mW |
| Rds On Max | 1.25 Ω |
| Resistance | 3 Ω |
| Turn-Off Delay Time | 35 ns |
| Turn-On Delay Time | 25 ns |
| Case/Package | SOT-416 |
| Mount | Surface Mount |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Height | 700 µm |
| Length | 1.58 mm |
| Width | 760 µm |
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