SI7868DP-T1 Generic image

SI7868DP-T1

Part No
SI7868DP-T1
Manufacturer
Vishay
Description
Power Field-Effect Transistor, 18A I(D), 20V, 0.00225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 18 A
    Drain to Source Resistance 2.25 mΩ
    Max Operating Temperature 150 °C
    Max Power Dissipation 5.4 W
    Min Breakdown Voltage 20 V
    Number of Elements 1
    Number of Pins 8
    Number of Terminals 8
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