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SI2371EDS-T1-GE3
- Part No
- SI2371EDS-T1-GE3
- Manufacturer
- Vishay
- Description
- Mosfet Transistor, P Channel, -4.8 A, -30 V, 0.037 Ohm, -10 V, -1.5 V |Vishay SI2371EDS-T1-GE3
- Datasheet
- SI2371EDS-T1-GE3
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 4.8 A |
| Drain to Source Breakdown Voltage | -30 V |
| Drain to Source Resistance | 45 mΩ |
| Drain to Source Voltage (Vdss) | -30 V |
| Element Configuration | Single |
| Fall Time | 62 ns |
| Gate to Source Voltage (Vgs) | 12 V |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 1.7 W |
| Min Breakdown Voltage | 30 V |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Packaging | Digi-Reel® |
| Power Dissipation | 1.7 W |
| Rds On Max | 45 mΩ |
| Resistance | 45 mΩ |
| Rise Time | 65 ns |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Threshold Voltage | -600 mV |
| Turn-Off Delay Time | 52 ns |
| Turn-On Delay Time | 7 ns |
| Case/Package | SOT-23 |
| Mount | Surface Mount |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Height | 1.12 mm |
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