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FQU10N20CTU
- Part No
- FQU10N20CTU
- Manufacturer
- onsemi
- Description
- N-Ch/200V/10A/Qfet Rohs Compliant: Yes |Onsemi FQU10N20CTU
- Datasheet
- FQU10N20CTU
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 7.8 A |
| Current Rating | 7.8 A |
| Drain to Source Breakdown Voltage | 200 V |
| Drain to Source Resistance | 360 mΩ |
| Drain to Source Voltage (Vdss) | 200 V |
| Element Configuration | Single |
| Fall Time | 72 ns |
| Gate to Source Voltage (Vgs) | 30 V |
| Input Capacitance | 510 pF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 50 W |
| Min Breakdown Voltage | 200 V |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Rds On Max | 360 mΩ |
| Rise Time | 92 ns |
| Schedule B | 8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080 |
| Turn-Off Delay Time | 70 ns |
| Turn-On Delay Time | 11 ns |
| Voltage Rating (DC) | 200 V |
| Case/Package | TO-251-3 |
| Mount | Through Hole |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Weight | 343.08 mg |
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