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FQU17P06TU
- Part No
- FQU17P06TU
- Manufacturer
- onsemi
- Description
- Power MOSFET, P-Channel, QFET®, -60 V, -12 A, 135 mΩ, IPAK
- Datasheet
- FQU17P06TU
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 12 A |
| Current Rating | -12 A |
| Drain to Source Breakdown Voltage | -60 V |
| Drain to Source Resistance | 135 mΩ |
| Element Configuration | Single |
| Fall Time | 60 ns |
| Gate to Source Voltage (Vgs) | 25 V |
| Input Capacitance | 900 pF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 44 W |
| Min Breakdown Voltage | 60 V |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Power Dissipation | 2.5 W |
| Rds On Max | 135 mΩ |
| Resistance | 135 MΩ |
| Rise Time | 100 ns |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Threshold Voltage | -4 V |
| Turn-Off Delay Time | 22 ns |
| Turn-On Delay Time | 13 ns |
| Voltage Rating (DC) | -60 V |
| Case/Package | TO-251-3 |
| Contact Plating | Tin |
| Mount | Through Hole |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Weight | 343.08 mg |
| Height | 7.57 mm |
| Length | 6.8 mm |
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