FQPF6N90C Generic image

FQPF6N90C

Part No
FQPF6N90C
Manufacturer
onsemi
Description
Power Mosfet, N-channel, Qfet®, 900 V, 6 A, 2.3 Ω, TO-220F
Datasheet
FQPF6N90C
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 6 A
    Drain to Source Breakdown Voltage 900 V
    Drain to Source Resistance 2.3 Ω
    Drain to Source Voltage (Vdss) 900 V
    Element Configuration Single
    Fall Time 60 ns
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 1.77 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 56 W
    Min Breakdown Voltage 900 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 56 W
    Rds On Max 2.3 Ω
    Recovery Time 630 ns
    Resistance 2.3 Ω
    Rise Time 90 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Threshold Voltage 5 V
    Turn-Off Delay Time 55 ns
    Turn-On Delay Time 35 ns
    Case/Package TO-220-3
    Contact Plating Tin
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Weight 2.27 g
    Height 19.5 mm
    Length 10.16 mm
    Width 4.7 mm
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