FQPF22P10 Generic image

FQPF22P10

Part No
FQPF22P10
Manufacturer
onsemi
Description
Power MOSFET, P-Channel, QFET®, -100 V, -13.2 A, 125 mΩ, TO-220F
Datasheet
FQPF22P10
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 13.2 A
    Current Rating -13.2 A
    Drain to Source Breakdown Voltage -100 V
    Drain to Source Resistance 125 mΩ
    Drain to Source Voltage (Vdss) -100 V
    Element Configuration Single
    Fall Time 110 ns
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 1.5 nF
    Max Junction Temperature (Tj) 175 °C
    Max Operating Temperature 175 °C
    Max Power Dissipation 45 W
    Min Breakdown Voltage 100 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 45 W
    Rds On Max 125 mΩ
    Rise Time 170 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Turn-Off Delay Time 60 ns
    Turn-On Delay Time 17 ns
    Voltage Rating (DC) -100 V
    Case/Package TO-220-3
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Weight 2.27 g
    Height 19.5 mm
    Length 10.36 mm
    Width 4.9 mm
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