FQT4N25TF Generic image

FQT4N25TF

Part No
FQT4N25TF
Manufacturer
onsemi
Description
Power Mosfet, N-channel, Qfet®, 250 V, 0.83 A, 1.75 Ω, SOT-223
Datasheet
FQT4N25TF
Test Report
Available
Samples
Available

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    Availability:
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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 830 mA
    Current Rating 830 mA
    Drain to Source Breakdown Voltage 250 V
    Drain to Source Resistance 1.75 Ω
    Drain to Source Voltage (Vdss) 250 V
    Element Configuration Single
    Fall Time 22 ns
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 200 pF
    Max Operating Temperature 150 °C
    Max Power Dissipation 2.5 W
    Min Breakdown Voltage 250 V
    Min Operating Temperature -55 °C
    Number of Elements 1
    Power Dissipation 2.5 W
    Rds On Max 1.75 Ω
    Resistance 1.75 Ω
    Rise Time 45 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Threshold Voltage 5 V
    Turn-Off Delay Time 6.4 ns
    Turn-On Delay Time 6.8 ns
    Voltage Rating (DC) 250 V
    Case/Package SOT-223
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 4
    Weight 188 mg
    Height 1.7 mm
    Length 6.7 mm
    Width 3.7 mm
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