FQT5P10TF Generic image

FQT5P10TF

Part No
FQT5P10TF
Manufacturer
onsemi
Description
ON SEMICONDUCTOR - FQT5P10TF - MOSFET-Transistor, p-Kanal, -1 A, -100 V, 0.82 ohm, -10 V, -4 V
Datasheet
FQT5P10TF
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 1 A
    Current Rating -1 A
    Drain to Source Breakdown Voltage -100 V
    Drain to Source Resistance 1.05 Ω
    Drain to Source Voltage (Vdss) -100 V
    Element Configuration Single
    Fall Time 30 ns
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 250 pF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 2 W
    Min Breakdown Voltage 100 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Packaging Tape & Reel
    Power Dissipation 2 W
    Rds On Max 1.05 Ω
    Resistance 1.05 Ω
    Rise Time 70 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Threshold Voltage -4 V
    Turn-Off Delay Time 12 ns
    Turn-On Delay Time 9 ns
    Voltage Rating (DC) -100 V
    Case/Package SOT-223
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 4
    Weight 188 mg
    Height 1.8 mm
    Length 6.5 mm
    Width 3.56 mm
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