FQPF27P06 Generic image

FQPF27P06

Part No
FQPF27P06
Manufacturer
onsemi
Description
Power MOSFET, P-Channel, QFET®, -60 V, -17 A, 26 mΩ, TO-220F
Datasheet
FQPF27P06
Test Report
Available
Samples
Available

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    Availability:
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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 17 A
    Current Rating -17 A
    Drain to Source Breakdown Voltage -60 V
    Drain to Source Resistance 70 mΩ
    Drain to Source Voltage (Vdss) -60 V
    Element Configuration Single
    Fall Time 90 ns
    Gate to Source Voltage (Vgs) 25 V
    Input Capacitance 1.4 nF
    Max Junction Temperature (Tj) 175 °C
    Max Operating Temperature 175 °C
    Max Power Dissipation 47 W
    Min Breakdown Voltage 60 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 47 W
    Rds On Max 70 mΩ
    Resistance 70 MΩ
    Rise Time 185 ns
    Schedule B 8541290080
    Threshold Voltage -2 V
    Turn-Off Delay Time 30 ns
    Turn-On Delay Time 18 ns
    Voltage Rating (DC) -60 V
    Case/Package TO-220-3
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Weight 2.27 g
    Height 19.5 mm
    Length 10.67 mm
    Width 4.7 mm
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