Generic image
FQPF11N50CF
- Part No
- FQPF11N50CF
- Manufacturer
- onsemi
- Description
- Power MOSFET, N-Channel, QFET®, FRFET®, 500 V, 11 A, 550 mΩ, TO-220F
- Datasheet
- FQPF11N50CF
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 11 A |
| Drain to Source Breakdown Voltage | 500 V |
| Drain to Source Resistance | 550 mΩ |
| Drain to Source Voltage (Vdss) | 500 V |
| Element Configuration | Single |
| Fall Time | 75 ns |
| Gate to Source Voltage (Vgs) | 30 V |
| Input Capacitance | 2.055 nF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 48 W |
| Min Breakdown Voltage | 500 V |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Power Dissipation | 48 W |
| Rds On Max | 550 mΩ |
| Rise Time | 70 ns |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Turn-Off Delay Time | 120 ns |
| Turn-On Delay Time | 24 ns |
| Case/Package | TO-220-3 |
| Mount | Through Hole |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Weight | 2.27 g |
| Height | 16.07 mm |
| Length | 10.36 mm |
| Width | 4.9 mm |
added to cart
View cart
Related Products