FQPF11P06 Generic image

FQPF11P06

Part No
FQPF11P06
Manufacturer
onsemi
Description
Power MOSFET, P-Channel, QFET®, -60 V, -8.6 A, 175 mΩ, TO-220F
Datasheet
FQPF11P06
Test Report
Available
Samples
Available

Request for Quote

    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 8.6 A
    Current Rating -11.4 A
    Drain to Source Breakdown Voltage -60 V
    Drain to Source Resistance 175 mΩ
    Drain to Source Voltage (Vdss) 60 V
    Element Configuration Single
    Fall Time 45 ns
    Gate to Source Voltage (Vgs) 25 V
    Input Capacitance 550 pF
    Max Operating Temperature 175 °C
    Max Power Dissipation 30 W
    Min Breakdown Voltage 60 V
    Min Operating Temperature -55 °C
    Number of Elements 1
    Packaging Tape & Reel (TR)
    Power Dissipation 30 W
    Rds On Max 175 mΩ
    Resistance 175 MΩ
    Rise Time 40 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Turn-Off Delay Time 15 ns
    Turn-On Delay Time 6.5 ns
    Voltage Rating (DC) -60 V
    Case/Package TO-220-3
    Contact Plating Tin
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Weight 2.27 g
    Height 16.07 mm
    Length 10.36 mm
    Width 4.9 mm
    added to cart View cart