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FQPF12N60C
- Part No
- FQPF12N60C
- Manufacturer
- onsemi
- Description
- Power MOSFET, N-Channel, QFET®, 600 V, 12 A, 650 mΩ, TO-220F
- Datasheet
- FQPF12N60C
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 12 A |
| Current Rating | 12 A |
| Drain to Source Breakdown Voltage | 600 V |
| Drain to Source Resistance | 650 mΩ |
| Drain to Source Voltage (Vdss) | 600 V |
| Element Configuration | Single |
| Fall Time | 90 ns |
| Gate to Source Voltage (Vgs) | 30 V |
| Input Capacitance | 2.29 nF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 51 W |
| Min Breakdown Voltage | 600 V |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Power Dissipation | 51 W |
| Rds On Max | 650 mΩ |
| Rise Time | 85 ns |
| Threshold Voltage | 4 V |
| Turn-Off Delay Time | 155 ns |
| Voltage Rating (DC) | 600 V |
| Case/Package | TO-220-3 |
| Mount | Through Hole |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Weight | 2.27 g |
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