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FJN3302RTA
- Part No
- FJN3302RTA
- Manufacturer
- onsemi
- Description
- Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
- Datasheet
- FJN3302RTA
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Collector Base Voltage (VCBO) | 50 V |
| Collector Emitter Breakdown Voltage | 50 V |
| Collector Emitter Saturation Voltage | 300 mV |
| Collector Emitter Voltage (VCEO) | 50 V |
| Continuous Collector Current | 100 mA |
| Current Rating | 100 mA |
| Element Configuration | Single |
| Emitter Base Voltage (VEBO) | 10 V |
| Gain Bandwidth Product | 250 MHz |
| hFE Min | 30 |
| Max Breakdown Voltage | 50 V |
| Max Collector Current | 100 mA |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 300 mW |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Packaging | Tape & Box (TB) |
| Polarity | NPN |
| Power Dissipation | 300 mW |
| Transition Frequency | 250 MHz |
| Voltage Rating (DC) | 50 V |
| Case/Package | TO-92-3 |
| Mount | Through Hole |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Weight | 240 mg |
| Height | 8.77 mm |
| Length | 1.7 mm |
| Width | 980 µm |
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