FJMA790 Generic image

FJMA790

Part No
FJMA790
Manufacturer
onsemi
Description
FJMA790 Series 35 V 1.56 W 2 A PNP Epitaxial Silicon Transistor - MICROFET-6
Datasheet
FJMA790
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Collector Base Voltage (VCBO) -50 V
    Collector Emitter Breakdown Voltage -35 V
    Collector Emitter Saturation Voltage -450 mV
    Collector Emitter Voltage (VCEO) 35 V
    Current Rating -2 A
    Element Configuration Single
    Emitter Base Voltage (VEBO) -5 V
    hFE Min 100
    Max Breakdown Voltage 35 V
    Max Collector Current 2 A
    Max Frequency 1 MHz
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 1.56 W
    Min Operating Temperature -55 °C
    Number of Elements 1
    Polarity PNP
    Power Dissipation 800 mW
    Voltage Rating (DC) -35 V
    Mount Surface Mount
    Number of Pins 6
    Number of Terminals 6
    Weight 30 mg
    Height 850 µm
    Length 2 mm
    Width 2 mm
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