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FJPF13009H1TU
- Part No
- FJPF13009H1TU
- Manufacturer
- onsemi
- Description
- Bipolar (BJT) Transistor NPN 400V 12A 4MHz 50W Through Hole TO-220F-3 (Y-Forming)
- Datasheet
- FJPF13009H1TU
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Collector Base Voltage (VCBO) | 700 V |
| Collector Emitter Breakdown Voltage | 400 V |
| Collector Emitter Saturation Voltage | 3 V |
| Collector Emitter Voltage (VCEO) | 400 V |
| Element Configuration | Single |
| Emitter Base Voltage (VEBO) | 9 V |
| Frequency | 4 MHz |
| Gain Bandwidth Product | 4 MHz |
| hFE Min | 8 |
| Max Collector Current | 12 A |
| Max Frequency | 4 MHz |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 50 W |
| Min Operating Temperature | -65 °C |
| Number of Elements | 1 |
| Polarity | NPN |
| Power Dissipation | 50 W |
| Transition Frequency | 4 MHz |
| Case/Package | TO-220-3 |
| Mount | Through Hole |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Weight | 2.27 g |
| Height | 16.07 mm |
| Length | 10.36 mm |
| Width | 4.9 mm |
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