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FJE3303H1TU
- Part No
- FJE3303H1TU
- Manufacturer
- onsemi
- Description
- Tube Through Hole NPN Single Bipolar (BJT) Transistor 8 @ 500mA 2V 1.5A 20W 4MHz
- Datasheet
- FJE3303H1TU
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Collector Base Voltage (VCBO) | 700 V |
| Collector Emitter Breakdown Voltage | 400 V |
| Collector Emitter Saturation Voltage | 3 V |
| Collector Emitter Voltage (VCEO) | 400 V |
| Continuous Drain Current (ID) | 1.5 A |
| Current Rating | 1.5 A |
| Drain to Source Breakdown Voltage | 700 V |
| Element Configuration | Single |
| Emitter Base Voltage (VEBO) | 9 V |
| Frequency | 4 MHz |
| Gain Bandwidth Product | 4 MHz |
| hFE Min | 8 |
| Max Collector Current | 1.5 A |
| Max Frequency | 100 kHz |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 20 W |
| Min Operating Temperature | -65 °C |
| Number of Elements | 1 |
| Polarity | NPN |
| Power Dissipation | 20 W |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Transition Frequency | 4 MHz |
| Voltage Rating (DC) | 400 V |
| Case/Package | TO-126 |
| Mount | Through Hole |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Weight | 761 mg |
| Height | 11 mm |
| Length | 8 mm |
| Width | 3.25 mm |
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