FJD5555TM Generic image

FJD5555TM

Part No
FJD5555TM
Manufacturer
onsemi
Description
400V 100W 5A 20@800mA3V 170mV@1A200mA NPN +150¡Í@(Tj) D-PAK Bipolar Transistors - BJT ROHS
Datasheet
FJD5555TM
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Collector Base Voltage (VCBO) 1.05 kV
    Collector Emitter Breakdown Voltage 400 V
    Collector Emitter Saturation Voltage 170 mV
    Collector Emitter Voltage (VCEO) 400 V
    Element Configuration Single
    Emitter Base Voltage (VEBO) 14 V
    hFE Min 20
    Max Breakdown Voltage 400 V
    Max Collector Current 5 A
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 1.34 W
    Min Operating Temperature -55 °C
    Number of Elements 1
    Polarity NPN
    Power Dissipation 1.34 W
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Case/Package DPAK
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 2
    Weight 260.37 mg
    Height 2.517 mm
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