FDS6892A Generic image

FDS6892A

Part No
FDS6892A
Manufacturer
onsemi
Description
Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET 20V, 7.5A, 18mΩ
Datasheet
FDS6892A
Test Report
Available
Samples
Available

Request for Quote

    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 7.5 A
    Current Rating 7.5 A
    Drain to Source Breakdown Voltage 20 V
    Drain to Source Resistance 18 mΩ
    Drain to Source Voltage (Vdss) 20 V
    Dual Supply Voltage 20 V
    Element Configuration Dual
    Fall Time 9 ns
    Gate to Source Voltage (Vgs) 12 V
    Input Capacitance 1.333 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 2 W
    Min Breakdown Voltage 20 V
    Min Operating Temperature -55 °C
    Nominal Vgs 900 mV
    Number of Channels 2
    Number of Elements 2
    Packaging Cut Tape
    Power Dissipation 2 W
    Rds On Max 18 mΩ
    Resistance 18 MΩ
    Rise Time 15 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Termination SMD/SMT
    Threshold Voltage 900 mV
    Turn-Off Delay Time 26 ns
    Turn-On Delay Time 8 ns
    Voltage Rating (DC) 20 V
    Case/Package SOIC
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 8
    Weight 187 mg
    Height 1.75 mm
    Length 5 mm
    Width 4 mm
    added to cart View cart