FDS4435BZ Generic image

FDS4435BZ

Part No
FDS4435BZ
Manufacturer
onsemi
Description
P-Channel PowerTrench® MOSFET -30V, -8.8A, 20mΩ
Datasheet
FDS4435BZ
Test Report
Available
Samples
Available

Request for Quote

    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 8.8 A
    Current Rating -8.8 A
    Drain to Source Breakdown Voltage -30 V
    Drain to Source Resistance 20 mΩ
    Drain to Source Voltage (Vdss) -30 V
    Element Configuration Single
    Fall Time 38 ns
    Gate to Source Voltage (Vgs) 25 V
    Input Capacitance 1.845 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 2.5 W
    Min Breakdown Voltage 30 V
    Min Operating Temperature -55 °C
    Nominal Vgs -2.1 V
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 2.5 W
    Rds On Max 20 mΩ
    Resistance 20 MΩ
    Rise Time 13 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Threshold Voltage -2.1 V
    Turn-Off Delay Time 30 ns
    Turn-On Delay Time 10 ns
    Voltage Rating (DC) -30 V
    Case/Package SOIC
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 8
    Weight 130 mg
    Height 1.75 mm
    Length 5 mm
    Width 4 mm
    added to cart View cart