FDS4935BZ Generic image

FDS4935BZ

Part No
FDS4935BZ
Manufacturer
onsemi
Description
Dual P-Channel 30 V 1.6 W 40 nC Silicon Surface Mount Mosfet - SOIC-8
Datasheet
FDS4935BZ
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 6.9 A
    Current Rating -6.9 A
    Drain to Source Breakdown Voltage -30 V
    Drain to Source Resistance 22 mΩ
    Drain to Source Voltage (Vdss) -30 V
    Dual Supply Voltage -30 V
    Element Configuration Dual
    Fall Time 13 ns
    Gate to Source Voltage (Vgs) 25 V
    Input Capacitance 1.36 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 1.6 W
    Min Breakdown Voltage 30 V
    Min Operating Temperature -55 °C
    Nominal Vgs 1.9 V
    Number of Channels 2
    Number of Elements 2
    Packaging Cut Tape
    Power Dissipation 1.6 W
    Rds On Max 22 mΩ
    Resistance 22 MΩ
    Rise Time 13 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Termination SMD/SMT
    Threshold Voltage -1.9 V
    Turn-Off Delay Time 68 ns
    Turn-On Delay Time 12 ns
    Voltage Rating (DC) -30 V
    Case/Package SOIC
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 8
    Weight 187 mg
    Height 1.75 mm
    Length 5 mm
    Width 4 mm
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