FDS4935A Generic image

FDS4935A

Part No
FDS4935A
Manufacturer
onsemi
Description
ON SEMICONDUCTOR - FDS4935A - DUAL P CHANNEL MOSFET, -30V, SOIC
Datasheet
FDS4935A
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 7 A
    Current 7 A
    Current Rating -7 A
    Drain to Source Breakdown Voltage -30 V
    Drain to Source Resistance 23 mΩ
    Drain to Source Voltage (Vdss) -30 V
    Dual Supply Voltage -30 V
    Element Configuration Dual
    Fall Time 25 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 1.233 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 175 °C
    Max Power Dissipation 2 W
    Min Breakdown Voltage 30 V
    Min Operating Temperature -55 °C
    Nominal Vgs -1.6 V
    Number of Channels 2
    Number of Elements 2
    Packaging Cut Tape
    Power Dissipation 900 mW
    Rds On Max 23 mΩ
    Resistance 23 MΩ
    Rise Time 10 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|85
    Termination SMD/SMT
    Threshold Voltage -1.6 V
    Turn-Off Delay Time 48 ns
    Turn-On Delay Time 13 ns
    Voltage 30 V
    Voltage Rating (DC) -30 V
    Case/Package SOIC
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 8
    Height 1.75 mm
    Length 5 mm
    Width 4 mm
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