FDS4897C Generic image

FDS4897C

Part No
FDS4897C
Manufacturer
onsemi
Description
Trans Mosfet N/p-ch 40V 6.2A/4.4A 8-PIN SOIC T/r / Mosfet N/p-ch 40V 8-SOIC
Datasheet
FDS4897C
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 6.2 A
    Drain to Source Breakdown Voltage 40 V
    Drain to Source Resistance 29 mΩ
    Drain to Source Voltage (Vdss) 40 V
    Fall Time 18 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 760 pF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 2 W
    Min Breakdown Voltage 40 V
    Min Operating Temperature -55 °C
    Number of Channels 2
    Number of Elements 2
    Power Dissipation 2 W
    Rds On Max 29 mΩ
    Resistance 29 MΩ
    Rise Time 15 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Threshold Voltage 1.9 V
    Turn-Off Delay Time 45 ns
    Case/Package SOIC
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 8
    Weight 187 mg
    Height 1.75 mm
    Length 5 mm
    Width 4 mm
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