FDS4675 Generic image

FDS4675

Part No
FDS4675
Manufacturer
onsemi
Description
ON SEMICONDUCTOR - FDS4675 - Power MOSFET, P Channel, 40 V, 11 A, 0.013 ohm, SOIC, Surface Mount
Datasheet
FDS4675
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 11 A
    Current Rating -11 A
    Drain to Source Breakdown Voltage -40 V
    Drain to Source Resistance 13 mΩ
    Drain to Source Voltage (Vdss) -40 V
    Dual Supply Voltage -40 V
    Element Configuration Single
    Fall Time 60 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 4.35 nF
    Max Junction Temperature (Tj) 175 °C
    Max Operating Temperature 175 °C
    Max Power Dissipation 2.4 W
    Min Breakdown Voltage 40 V
    Min Operating Temperature -55 °C
    Nominal Vgs -1.4 V
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 2.4 W
    Rds On Max 13 mΩ
    Resistance 13 MΩ
    Rise Time 29 ns
    Schedule B 8541290080
    Termination SMD/SMT
    Threshold Voltage -1.4 V
    Turn-Off Delay Time 95 ns
    Turn-On Delay Time 20 ns
    Voltage Rating (DC) -40 V
    Case/Package SOIC
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 8
    Weight 130 mg
    Height 1.75 mm
    Length 4.9 mm
    Width 3.9 mm
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