FDS3992 Generic image

FDS3992

Part No
FDS3992
Manufacturer
onsemi
Description
ON SEMICONDUCTOR - FDS3992 - Dual MOSFET, Dual N Channel, 4.5 A, 100 V, 0.054 ohm, 10 V, 4 V
Datasheet
FDS3992
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 4.5 A
    Current Rating 4.5 A
    Drain to Source Breakdown Voltage 100 V
    Drain to Source Resistance 62 mΩ
    Drain to Source Voltage (Vdss) 100 V
    Dual Supply Voltage 100 V
    Element Configuration Dual
    Fall Time 26 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 750 pF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 2.5 W
    Min Breakdown Voltage 100 V
    Min Operating Temperature -55 °C
    Nominal Vgs 4 V
    Number of Channels 2
    Number of Elements 2
    Packaging Cut Tape
    Power Dissipation 2.5 W
    Rds On Max 62 mΩ
    Resistance 62 MΩ
    Rise Time 23 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Threshold Voltage 4 V
    Turn-Off Delay Time 28 ns
    Turn-On Delay Time 8 ns
    Voltage Rating (DC) 100 V
    Case/Package SOIC
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 8
    Weight 187 mg
    Height 1.75 mm
    Length 4.9 mm
    Width 3.9 mm
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