FDS5672 Generic image

FDS5672

Part No
FDS5672
Manufacturer
onsemi
Description
In a Pack of 5, N-Channel MOSFET, 12 A, 60 V, 8-Pin SOIC ON Semiconductor FDS5672
Datasheet
FDS5672
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 12 A
    Current Rating 12 A
    Drain to Source Breakdown Voltage 60 V
    Drain to Source Resistance 10 mΩ
    Drain to Source Voltage (Vdss) 60 V
    Element Configuration Single
    Fall Time 14 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 2.2 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 2.5 W
    Min Breakdown Voltage 60 V
    Min Operating Temperature -55 °C
    Nominal Vgs 4 V
    Number of Channels 1
    Number of Elements 1
    Packaging Cut Tape
    Power Dissipation 2.5 W
    Rds On Max 10 mΩ
    Resistance 10 MΩ
    Rise Time 20 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Threshold Voltage 4 V
    Turn-Off Delay Time 35 ns
    Turn-On Delay Time 13 ns
    Voltage Rating (DC) 60 V
    Case/Package SOIC
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 8
    Weight 130 mg
    Height 1.75 mm
    Length 5 mm
    Width 4 mm
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