FDS5670 Generic image

FDS5670

Part No
FDS5670
Manufacturer
onsemi
Description
N-Channel PowerTrench® MOSFET, 60V, 10A, 14mΩ
Datasheet
FDS5670
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 10 A
    Current 10 A
    Current Rating 10 A
    Drain to Source Breakdown Voltage 60 V
    Drain to Source Resistance 14 mΩ
    Drain to Source Voltage (Vdss) 60 V
    Dual Supply Voltage 60 V
    Fall Time 23 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 2.9 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 2.5 W
    Min Breakdown Voltage 60 V
    Min Operating Temperature -55 °C
    Nominal Vgs 2.4 V
    Number of Channels 1
    Number of Elements 1
    Packaging Cut Tape
    Power Dissipation 2.5 W
    Rds On Max 14 mΩ
    Resistance 14 MΩ
    Rise Time 10 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Threshold Voltage 2.4 V
    Turn-Off Delay Time 50 ns
    Turn-On Delay Time 16 ns
    Voltage 60 V
    Voltage Rating (DC) 60 V
    Case/Package SOIC
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 8
    Height 1.75 mm
    Length 5 mm
    Width 4 mm
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