FCD5N60TM Generic image

FCD5N60TM

Part No
FCD5N60TM
Manufacturer
onsemi
Description
N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 4.6 A, 950 mΩ, DPAK
Datasheet
FCD5N60TM
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 4.6 A
    Current Rating 4.6 A
    Drain to Source Breakdown Voltage 600 V
    Drain to Source Resistance 950 mΩ
    Drain to Source Voltage (Vdss) 600 V
    Element Configuration Single
    Fall Time 22 ns
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 600 pF
    Max Operating Temperature 150 °C
    Max Power Dissipation 54 W
    Min Breakdown Voltage 600 V
    Min Operating Temperature -55 °C
    Number of Elements 1
    Packaging Cut Tape
    Power Dissipation 54 W
    Rds On Max 950 mΩ
    Resistance 950 MΩ
    Rise Time 40 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Threshold Voltage 5 V
    Turn-Off Delay Time 47 ns
    Turn-On Delay Time 12 ns
    Voltage Rating (DC) 600 V
    Case/Package DPAK
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 2
    Weight 260.37 mg
    Height 2.39 mm
    Length 6.73 mm
    Width 6.22 mm
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