FCB36N60NTM Generic image

FCB36N60NTM

Part No
FCB36N60NTM
Manufacturer
onsemi
Description
N-Channel Power MOSFET, SUPREMOS®, FAST, 600V, 25A, 125mΩ, D2PAK
Datasheet
FCB36N60NTM
Test Report
Available
Samples
Available

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    Availability:
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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 36 A
    Drain to Source Breakdown Voltage 600 V
    Drain to Source Resistance 90 mΩ
    Drain to Source Voltage (Vdss) 600 V
    Element Configuration Single
    Fall Time 4 ns
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 4.785 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 312 W
    Min Breakdown Voltage 600 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Packaging Cut Tape
    Power Dissipation 312 W
    Rds On Max 90 mΩ
    Resistance 90 MΩ
    Rise Time 22 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Threshold Voltage 2 V
    Turn-Off Delay Time 94 ns
    Turn-On Delay Time 23 ns
    Case/Package D2PAK
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 3
    Weight 1.762 g
    Height 5.08 mm
    Length 10.67 mm
    Width 11.33 mm
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