FCA35N60 Generic image

FCA35N60

Part No
FCA35N60
Manufacturer
onsemi
Description
N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 35 A, 98 mΩ, TO-3P
Datasheet
FCA35N60
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 35 A
    Drain to Source Breakdown Voltage 650 V
    Drain to Source Resistance 98 mΩ
    Drain to Source Voltage (Vdss) 600 V
    Element Configuration Single
    Fall Time 73 ns
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 6.64 nF
    Max Operating Temperature 150 °C
    Max Power Dissipation 312.5 W
    Min Breakdown Voltage 600 V
    Min Operating Temperature -55 °C
    Number of Elements 1
    Power Dissipation 312.5 W
    Rds On Max 98 mΩ
    Rise Time 120 ns
    Schedule B 8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080
    Threshold Voltage 3 V
    Turn-Off Delay Time 105 ns
    Turn-On Delay Time 34 ns
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Weight 6.401 g
    Height 20.1 mm
    Length 15.8 mm
    Width 5 mm
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