FCH22N60N Generic image

FCH22N60N

Part No
FCH22N60N
Manufacturer
onsemi
Description
N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 22 A, 165 mΩ, TO-247
Datasheet
FCH22N60N
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 22 A
    Drain to Source Breakdown Voltage 600 V
    Drain to Source Resistance 165 mΩ
    Drain to Source Voltage (Vdss) 600 V
    Element Configuration Single
    Fall Time 4 ns
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 1.95 nF
    Max Operating Temperature 150 °C
    Max Power Dissipation 205 W
    Min Breakdown Voltage 600 V
    Min Operating Temperature -55 °C
    Number of Elements 1
    Packaging Rail/Tube
    Power Dissipation 205 W
    Rds On Max 165 mΩ
    Rise Time 16.7 ns
    Threshold Voltage 3 V
    Turn-Off Delay Time 49 ns
    Turn-On Delay Time 16.9 ns
    Case/Package TO-247
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Weight 6.39 g
    Height 21 mm
    Length 15.95 mm
    Width 5.03 mm
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