FCB11N60TM Generic image

FCB11N60TM

Part No
FCB11N60TM
Manufacturer
onsemi
Description
N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 11 A, 380 mΩ, D2PAK
Datasheet
FCB11N60TM
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 11 A
    Current Rating 11 A
    Drain to Source Breakdown Voltage 600 V
    Drain to Source Resistance 380 mΩ
    Drain to Source Voltage (Vdss) 600 V
    Element Configuration Single
    Fall Time 56 ns
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 1.49 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 125 W
    Min Breakdown Voltage 600 V
    Min Operating Temperature -55 °C
    Nominal Vgs 5 V
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 125 W
    Rds On Max 380 mΩ
    Resistance 380 MΩ
    Rise Time 98 ns
    Schedule B 8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080
    Threshold Voltage 5 V
    Turn-Off Delay Time 119 ns
    Turn-On Delay Time 34 ns
    Voltage Rating (DC) 600 V
    Case/Package TO-263
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 2
    Weight 1.31247 g
    Height 5.08 mm
    Length 10.67 mm
    Width 9.65 mm
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