FCH041N60E Generic image

FCH041N60E

Part No
FCH041N60E
Manufacturer
onsemi
Description
N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 77 A, 41 mΩ, TO-247
Datasheet
FCH041N60E
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 77 A
    Drain to Source Breakdown Voltage 600 V
    Drain to Source Resistance 41 mΩ
    Drain to Source Voltage (Vdss) 600 V
    Element Configuration Single
    Fall Time 85 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 13.7 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 592 W
    Min Breakdown Voltage 600 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 592 W
    Rds On Max 41 mΩ
    Rise Time 50 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Turn-Off Delay Time 320 ns
    Turn-On Delay Time 50 ns
    Case/Package TO-247-3
    Mount Through Hole
    Number of Pins 2
    Number of Terminals 3
    Weight 6.39 g
    Height 24.75 mm
    Length 15.87 mm
    Width 4.82 mm
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