FCD900N60Z Generic image

FCD900N60Z

Part No
FCD900N60Z
Manufacturer
onsemi
Description
FCD900N60Z Series 600 V 4.5 A N-Channel SuperFET® II Mosfet -TO-252, (D-Pak)
Datasheet
FCD900N60Z
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 4.5 A
    Drain to Source Breakdown Voltage 650 V
    Drain to Source Resistance 900 mΩ
    Drain to Source Voltage (Vdss) 600 V
    Element Configuration Single
    Fall Time 11.9 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 720 pF
    Max Operating Temperature 150 °C
    Max Power Dissipation 52 W
    Min Breakdown Voltage 600 V
    Min Operating Temperature -55 °C
    Number of Elements 1
    Power Dissipation 2 W
    Rds On Max 900 mΩ
    Rise Time 5.2 ns
    Turn-Off Delay Time 33.6 ns
    Turn-On Delay Time 10.9 ns
    Case/Package DPAK
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 2
    Weight 260.37 mg
    Height 6.22 mm
    Length 6.73 mm
    Width 2.39 mm
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