FCD7N60TM Generic image

FCD7N60TM

Part No
FCD7N60TM
Manufacturer
onsemi
Description
N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 7 A, 600 mΩ, DPAK
Datasheet
FCD7N60TM
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 7 A
    Current Rating 7 A
    Drain to Source Breakdown Voltage 600 V
    Drain to Source Resistance 600 mΩ
    Drain to Source Voltage (Vdss) 600 V
    Dual Supply Voltage 600 V
    Element Configuration Single
    Fall Time 32 ns
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 920 pF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 83 W
    Min Breakdown Voltage 600 V
    Min Operating Temperature -55 °C
    Nominal Vgs 5 V
    Number of Channels 1
    Number of Elements 1
    Packaging Cut Tape
    Power Dissipation 83 W
    Rds On Max 600 mΩ
    Resistance 600 MΩ
    Rise Time 55 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Termination SMD/SMT
    Threshold Voltage 5 V
    Turn-Off Delay Time 75 ns
    Turn-On Delay Time 35 ns
    Voltage Rating (DC) 600 V
    Case/Package DPAK
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 2
    Weight 260.37 mg
    Height 2.517 mm
    Length 6.73 mm
    Width 6.22 mm
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