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FCD9N60NTM
- Part No
- FCD9N60NTM
- Manufacturer
- onsemi
- Description
- N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 9 A, 385 mΩ, DPAK
- Datasheet
- FCD9N60NTM
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 9 A |
| Drain to Source Breakdown Voltage | 600 V |
| Drain to Source Resistance | 385 mΩ |
| Drain to Source Voltage (Vdss) | 600 V |
| Element Configuration | Single |
| Fall Time | 11.5 ns |
| Gate to Source Voltage (Vgs) | 30 V |
| Input Capacitance | 1 nF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 92.6 W |
| Min Breakdown Voltage | 600 V |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Packaging | Cut Tape |
| Power Dissipation | 92.6 W |
| Rds On Max | 385 mΩ |
| Rise Time | 9.6 ns |
| Schedule B | 8541290080 |
| Threshold Voltage | 3 V |
| Turn-Off Delay Time | 28.7 ns |
| Turn-On Delay Time | 12.7 ns |
| Case/Package | DPAK |
| Mount | Surface Mount |
| Number of Pins | 3 |
| Number of Terminals | 2 |
| Weight | 260.37 mg |
| Height | 2.39 mm |
| Length | 6.73 mm |
| Width | 6.22 mm |
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