BC550CBU Generic image

BC550CBU

Part No
BC550CBU
Manufacturer
onsemi
Description
Bipolar (BJT) Single Transistor, NPN, 45 V, 300 MHz, 500 mW, 100 mA, 420
Datasheet
BC550CBU
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Collector Base Voltage (VCBO) 50 V
    Collector Emitter Breakdown Voltage 45 V
    Collector Emitter Saturation Voltage 250 mV
    Collector Emitter Voltage (VCEO) 45 V
    Current Rating 100 mA
    Element Configuration Single
    Emitter Base Voltage (VEBO) 5 V
    Frequency 300 MHz
    Gain Bandwidth Product 300 MHz
    hFE Min 420
    Max Breakdown Voltage 50 V
    Max Collector Current 100 mA
    Max Frequency 1 MHz
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 625 mW
    Min Operating Temperature -65 °C
    Number of Elements 1
    Packaging Bulk
    Polarity NPN
    Power Dissipation 500 mW
    Schedule B 8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080
    Transition Frequency 300 MHz
    Voltage Rating (DC) 45 V
    Case/Package TO-92
    Contact Plating Tin
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Weight 179 mg
    Height 5.33 mm
    Length 4.58 mm
    Width 3.86 mm
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