BC549B Generic image

BC549B

Part No
BC549B
Manufacturer
onsemi
Description
Bulk Through Hole NPN Single Bipolar (BJT) Transistor 200 @ 2mA 5V 100mA 500mW 300MHz
Datasheet
BC549B
Test Report
Available
Samples
Available

Request for Quote

    Availability:
    Available

    Product Specification

    Specification Value
    Collector Base Voltage (VCBO) 30 V
    Collector Emitter Breakdown Voltage 30 V
    Collector Emitter Saturation Voltage 250 mV
    Collector Emitter Voltage (VCEO) 30 V
    Current Rating 100 mA
    Element Configuration Single
    Emitter Base Voltage (VEBO) 5 V
    Frequency 300 MHz
    Gain Bandwidth Product 300 MHz
    hFE Min 200
    Max Collector Current 100 mA
    Max Operating Temperature 150 °C
    Max Power Dissipation 625 mW
    Min Operating Temperature -65 °C
    Number of Elements 1
    Packaging Bulk
    Polarity NPN
    Power Dissipation 500 mW
    Termination Through Hole
    Transition Frequency 250 MHz
    Voltage Rating (DC) 30 V
    Case/Package TO-92-3
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Weight 200 mg
    Height 6.35 mm
    Length 6.35 mm
    Width 6.35 mm
    added to cart View cart