BC559 Generic image

BC559

Part No
BC559
Manufacturer
onsemi
Description
Bulk Through Hole PNP Single Bipolar (BJT) Transistor 110 @ 2mA 5V 100mA 500mW 150MHz
Datasheet
BC559
Test Report
Available
Samples
Available

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    Available

    Product Specification

    Specification Value
    Collector Base Voltage (VCBO) -30 V
    Collector Emitter Breakdown Voltage 30 V
    Collector Emitter Saturation Voltage 600 mV
    Collector Emitter Voltage (VCEO) 30 V
    Current Rating -100 mA
    Element Configuration Single
    Emitter Base Voltage (VEBO) -5 V
    Frequency 150 MHz
    Gain Bandwidth Product 150 MHz
    hFE Min 110
    Max Collector Current 100 mA
    Max Operating Temperature 150 °C
    Max Power Dissipation 500 mW
    Min Operating Temperature -55 °C
    Number of Elements 1
    Packaging Bulk
    Polarity PNP
    Power Dissipation 625 mW
    Termination Through Hole
    Transition Frequency 150 MHz
    Voltage Rating (DC) -30 V
    Case/Package TO-92-3
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Weight 200 mg
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