BC556ABU Generic image

BC556ABU

Part No
BC556ABU
Manufacturer
onsemi
Description
Bipolar (BJT) Single Transistor, PNP, -65 V, 150 MHz, 500 mW, -100 mA, 110
Datasheet
BC556ABU
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Collector Base Voltage (VCBO) -80 V
    Collector Emitter Breakdown Voltage 65 V
    Collector Emitter Saturation Voltage -250 mV
    Collector Emitter Voltage (VCEO) 65 V
    Current Rating -100 mA
    Element Configuration Single
    Emitter Base Voltage (VEBO) -5 V
    Frequency 150 MHz
    Gain Bandwidth Product 150 MHz
    hFE Min 110
    Max Collector Current 100 mA
    Max Frequency 10 MHz
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 625 mW
    Min Operating Temperature -65 °C
    Number of Elements 1
    Packaging Bulk
    Polarity PNP
    Power Dissipation 500 mW
    Schedule B 8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080
    Transition Frequency 150 MHz
    Voltage Rating (DC) -65 V
    Case/Package TO-92
    Contact Plating Tin
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Weight 179 mg
    Height 5.33 mm
    Length 5.2 mm
    Width 4.19 mm
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