BC80725MTF Generic image

BC80725MTF

Part No
BC80725MTF
Manufacturer
onsemi
Description
BC807 Series 45 V CE Breakdown .8 A PNP Epitaxial Silicon Transistor - SOT-23
Datasheet
BC80725MTF
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Collector Base Voltage (VCBO) -50 V
    Collector Emitter Breakdown Voltage 45 V
    Collector Emitter Saturation Voltage -700 mV
    Collector Emitter Voltage (VCEO) 45 V
    Current 8 A
    Element Configuration Single
    Emitter Base Voltage (VEBO) 5 V
    Frequency 100 MHz
    Gain Bandwidth Product 100 MHz
    hFE Min 100
    Max Breakdown Voltage 45 V
    Max Collector Current 800 mA
    Max Frequency 100 MHz
    Max Operating Temperature 150 °C
    Max Power Dissipation 350 mW
    Min Operating Temperature -65 °C
    Number of Elements 1
    Packaging Cut Tape
    Polarity PNP
    Power Dissipation 310 mW
    Schedule B 8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080
    Transition Frequency 100 MHz
    Voltage 45 V
    Case/Package SOT-23
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 3
    Weight 59.987591 mg
    Height 960 µm
    Length 2.9 mm
    Width 1.3 mm
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